analog power AM5460N n-channel 60-v (d-s) mosfet v ds (v) i d (a) 5 4.1 symbol limit units v ds 60 v gs 20 t a =25c 5 i continuous drain current a absolute maximum ratings (t a = 25c unless otherwise noted) parameter drainsource voltage v gatesource voltage product summary r ds(on) (m) 60 82 @ v gs = 10v 115 @ v gs = 4.5v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed ? small footprint dfn3x28l package typical applications: ? telecom dc/dc converters ? white led boost converters ? industrial dc/dc conversion ? automotive entertainment and gps dc/dc conversion d d d d g s s s dfn3x2 8l ep ? preliminary 1 publication order number: dsAM5460N t a =25c 5 t a =70c 3.7 i dm 30 i s 4.3 a t a =25c 3.5 t a =70c 2 t j , t stg 55 to 150 c symbol maximum units 3581 notesa. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature i d a pulsed drain current b continuous source current (diode conduction) a power dissipation a p d w continuous drain current a operating junction and storage temperature range thermal resistance ratings parameter maximum junctiontoambient a t <= 10 sec r ja c/w steady state ? preliminary 1 publication order number: dsAM5460N
analog power AM5460N parameter symbol test conditions min typ max unit gatesource threshold voltage v gs(th) v ds = v gs , id = 250 ua 1 1.5 3 v gatebody leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 48 v, v gs = 0 v 1 v ds = 48 v, v gs = 0 v, t j = 55c 25 onstate drain current i d(on) v ds = 5 v, v gs = 10 v 10 a v gs = 10 v, i d = 4 a 82 v gs = 4.5 v, i d = 3.3 a 115 forward transconductance g fs v ds = 15 v, i d = 4 a 10 s diode forward voltage v sd i s = 2.1 a, v gs = 0 v 0.77 v total gate charge q g 4.1 gatesource charge q gs 1.2 gatedrain charge q gd 1.4 turnon delay time t d(on) 2.5 rise time t r 4.1 turnoff delay time t d(off) 12.1 falltime t f 4.5 dynamic zero gate voltage drain current static ua m r ds(on) i dss nc v dd = 30 v, r l = 7.5 , i d = 4 a, v gen = 10 v, r gen = 6 drainsource onresistance ns v ds = 30 v, v gs = 4.5 v, i d = 4 a ? preliminary 2 publication order number: dsAM5460N notesa. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty,representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,consequential or incidental damages. typical parameters which may be provided in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buyer shall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. ? preliminary 2 publication order number: dsAM5460N
analog power AM5460N 1. on-resistance vs. drain current 2. transfer characteristics typical electrical characteristics 0 0.03 0.06 0.09 0.12 0.15 0 2 4 6 8 10 rds(on) onresistance () iddrain current (a) 4.0v 4.5v 6v,8v,10v 3.5v 3.0v 0.1 0.15 0.2 0.25 0.3 rds(on) onresistance () tj = 25 c i d = 3a 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 id drain current (a) vgs gatetosource voltage (v) tj = 25 c 0.1 1 10 source current (a) tj = 25 c ? preliminary 3 publication order number: dsAM5460N 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance 0 0.03 0.06 0.09 0.12 0.15 0 2 4 6 8 10 rds(on) onresistance () iddrain current (a) 4.0v 4.5v 6v,8v,10v 3.5v 3.0v 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 id drain current (a) vds draintosource voltage (v) 10v,8v,6v 4.5v 4.0v 3.5v 3.0v 2.5v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 rds(on) onresistance () vgs gatetosource voltage (v) tj = 25 c i d = 3a 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 id drain current (a) vgs gatetosource voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 is source current (a) vsd sourcetodrain voltage (v) tj = 25 c 0 100 200 300 400 500 600 0 5 10 15 20 capacitance (pf) vdsdraintosource voltage (v) ciss coss crss f = 1mhz ? preliminary 3 publication order number: dsAM5460N
analog power AM5460N 7. gate charge typical electrical characteristics 8. normalized on-resistance vs junction temperature 0.1 1 10 100 id current (a) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 vgsgatetosource voltage (v) qg total gate charge (nc) i d = 3a v ds = 25v 0.5 1 1.5 2 50 25 0 25 50 75 100 125 150 rds(on) onresistance (normalized) tj junction temperature (c) 20 30 40 50 60 70 peak transient power (w) ? preliminary 4 publication order number: dsAM5460N 9. safe operating area 10. single pulse maximum power dissipation 11. normalized thermal transient junction to ambient 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 vgsgatetosource voltage (v) qg total gate charge (nc) i d = 3a v ds = 25v 0.5 1 1.5 2 50 25 0 25 50 75 100 125 150 rds(on) onresistance (normalized) tj junction temperature (c) 0 10 20 30 40 50 60 70 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) x r ja r ja = 81 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 d = 0.5 0.2 0.1 0.05 0.02 single pulse p(pk) t 1 t 2 ? preliminary 4 publication order number: dsAM5460N
analog power AM5460N package information ? preliminary 5 publication order number: dsAM5460N note: 1. all dimension are in mm. 2. package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 3. package body sizes determined at the outermost ex tremes of the plastic body exclusive of mold flash , tie bar burrs, gate burrs and interlead flash, but includin g any mismatch between the top and bottom of the pl astic body. 4. the package top may be smaller than the package b ottom. ? preliminary 5 publication order number: dsAM5460N
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